Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/234535
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dc.coverage.spatial
dc.date.accessioned2019-03-26T09:03:54Z-
dc.date.available2019-03-26T09:03:54Z-
dc.identifier.urihttp://hdl.handle.net/10603/234535-
dc.format.extentxviii, 105p.
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleAn analytical study of high power schottky barrier diode on 4H silicon carbide SiC wafers
dc.title.alternative
dc.creator.researcherTalwar, Rajneesh
dc.subject.keyword4H-SiC
dc.subject.keywordEngineering and Technology,Engineering,Engineering Electrical and Electronic
dc.subject.keywordLinear Graded Doping
dc.subject.keywordPower Device
dc.subject.keywordSchottky Barrier Diode
dc.subject.keywordSilicon Carbide
dc.description.note
dc.contributor.guideChatterjee, A. K.
dc.publisher.placePatiala
dc.publisher.universityThapar Institute of Engineering and Technology
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.date.registered
dc.date.completed2010
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics and Communication Engineering

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file10(references).pdfAttached File203.37 kBAdobe PDFView/Open
file1(title).pdf63.34 kBAdobe PDFView/Open
file2(certificate).pdf935.31 kBAdobe PDFView/Open
file3(preliminary pages).pdf748.56 kBAdobe PDFView/Open
file4(chapter 1).pdf457.9 kBAdobe PDFView/Open
file5(chapter 2).pdf362.44 kBAdobe PDFView/Open
file6(chapter 3).pdf410.03 kBAdobe PDFView/Open
file7(chapter 4).pdf280.19 kBAdobe PDFView/Open
file8(chapter 5).pdf347.13 kBAdobe PDFView/Open
file9(chapter 6).pdf224.96 kBAdobe PDFView/Open


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