Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/234535
| Title: | An analytical study of high power schottky barrier diode on 4H silicon carbide SiC wafers |
| Researcher: | Talwar, Rajneesh |
| Guide(s): | Chatterjee, A. K. |
| Keywords: | 4H-SiC Engineering and Technology,Engineering,Engineering Electrical and Electronic Linear Graded Doping Power Device Schottky Barrier Diode Silicon Carbide |
| University: | Thapar Institute of Engineering and Technology |
| Completed Date: | 2010 |
| Pagination: | xviii, 105p. |
| URI: | http://hdl.handle.net/10603/234535 |
| Appears in Departments: | Department of Electronics and Communication Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| file10(references).pdf | Attached File | 203.37 kB | Adobe PDF | View/Open |
| file1(title).pdf | 63.34 kB | Adobe PDF | View/Open | |
| file2(certificate).pdf | 935.31 kB | Adobe PDF | View/Open | |
| file3(preliminary pages).pdf | 748.56 kB | Adobe PDF | View/Open | |
| file4(chapter 1).pdf | 457.9 kB | Adobe PDF | View/Open | |
| file5(chapter 2).pdf | 362.44 kB | Adobe PDF | View/Open | |
| file6(chapter 3).pdf | 410.03 kB | Adobe PDF | View/Open | |
| file7(chapter 4).pdf | 280.19 kB | Adobe PDF | View/Open | |
| file8(chapter 5).pdf | 347.13 kB | Adobe PDF | View/Open | |
| file9(chapter 6).pdf | 224.96 kB | Adobe PDF | View/Open |
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