1. Shodhganga@INFLIBNET
  2. Sharda University
  3. Department of Electronics and Communication Engineering (ECE)
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/233037
Title: Modeling and simulation of dual channel dual material gate AlGaN GaN high electron mobility transistor DCDMGHEMT
Researcher: Yadav, Rahis Kumar
Guide(s): Mehra, R M and Pathak, Pankaj
Keywords: Bandgap Technology
Engineering and Technology,Engineering,Engineering Electrical and Electronic
Heterostructures
Mobility Transistor
R F Transistors
University: Sharda University
Completed Date: 2017
Abstract: not available
Pagination: 190 p.
URI: http://hdl.handle.net/10603/233037
Appears in Departments:Department of Electronics and Communication Engineering (ECE)

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File Description SizeFormat 
01_title.pdfAttached File46.86 kBAdobe PDFView/Open
02_declaration.pdf20.28 kBAdobe PDFView/Open
03_certificate.pdf99.35 kBAdobe PDFView/Open
04_acknowledgement.pdf26.06 kBAdobe PDFView/Open
05_synopsis.pdf48.11 kBAdobe PDFView/Open
06_list of tables and figures.pdf122.49 kBAdobe PDFView/Open
07_abbreviations.pdf139.77 kBAdobe PDFView/Open
08_contents.pdf105.9 kBAdobe PDFView/Open
09_chapter 1.pdf741.87 kBAdobe PDFView/Open
10_chapter 2.pdf848.03 kBAdobe PDFView/Open
11_chapter 3.pdf2.24 MBAdobe PDFView/Open
12_chapter 4.pdf559.71 kBAdobe PDFView/Open
13_chapter 5.pdf1.11 MBAdobe PDFView/Open
14_chapter 6.pdf1.07 MBAdobe PDFView/Open
15_chapter 7.pdf54.9 kBAdobe PDFView/Open
16_references.pdf126.29 kBAdobe PDFView/Open
17_list of publications.pdf25.4 kBAdobe PDFView/Open
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