Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/231805
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DC FieldValueLanguage
dc.coverage.spatialInformation and Communication Engineering
dc.date.accessioned2019-03-14T10:02:06Z-
dc.date.available2019-03-14T10:02:06Z-
dc.identifier.urihttp://hdl.handle.net/10603/231805-
dc.description.abstractAbstract available
dc.format.extentxxii, 122p.
dc.languageOthers
dc.relation115-121
dc.rightsuniversity
dc.titleModeling and characterization of GaN based HEMTS for high frequency and high power applications
dc.title.alternative
dc.creator.researcherS, Baskaran
dc.subject.keywordHEMT
dc.subject.keywordIonization
dc.subject.keywordMicrowave
dc.subject.keywordPolarization
dc.subject.keywordVerticalElectricfield
dc.description.noteData not available
dc.contributor.guideKumar, N Mohan
dc.publisher.placeChennai
dc.publisher.universityAnna University
dc.publisher.institutionFaculty of Information and Communication Engineering
dc.date.registeredn.d.
dc.date.completed2018
dc.date.awardedn.d.
dc.format.dimensions28cm.
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Faculty of Information and Communication Engineering

Files in This Item:
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01_title page.pdfAttached File84.54 kBAdobe PDFView/Open
02_certificate.pdf1.84 MBAdobe PDFView/Open
03_abstract.pdf44.72 kBAdobe PDFView/Open
04_acknowledgement.pdf6.37 kBAdobe PDFView/Open
05_table of content.pdf26.8 kBAdobe PDFView/Open
06_list of table.pdf5.69 kBAdobe PDFView/Open
07_list of figures.pdf166.32 kBAdobe PDFView/Open
08_list of symbol and abbreviations.pdf146.96 kBAdobe PDFView/Open
09_chapter 1.pdf442.61 kBAdobe PDFView/Open
10_chapter 2.pdf481.8 kBAdobe PDFView/Open
11_chapter 3.pdf717.58 kBAdobe PDFView/Open
12_chapter 4.pdf865.06 kBAdobe PDFView/Open
13_chapter 5.pdf1.27 MBAdobe PDFView/Open
14_chapter 6.pdf893.82 kBAdobe PDFView/Open
15_chapter 7.pdf23.4 kBAdobe PDFView/Open
16_references.pdf210.33 kBAdobe PDFView/Open
17_list of publication.pdf8.99 kBAdobe PDFView/Open


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