1. Shodhganga@INFLIBNET
  2. Anna University
  3. Faculty of Information and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/231805
Title: Modeling and characterization of GaN based HEMTS for high frequency and high power applications
Researcher: S, Baskaran
Guide(s): Kumar, N Mohan
Keywords: HEMT
Ionization
Microwave
Polarization
VerticalElectricfield
University: Anna University
Completed Date: 2018
Abstract: Abstract available
Pagination: xxii, 122p.
URI: http://hdl.handle.net/10603/231805
Appears in Departments:Faculty of Information and Communication Engineering

Files in This Item:
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01_title page.pdfAttached File84.54 kBAdobe PDFView/Open
02_certificate.pdf1.84 MBAdobe PDFView/Open
03_abstract.pdf44.72 kBAdobe PDFView/Open
04_acknowledgement.pdf6.37 kBAdobe PDFView/Open
05_table of content.pdf26.8 kBAdobe PDFView/Open
06_list of table.pdf5.69 kBAdobe PDFView/Open
07_list of figures.pdf166.32 kBAdobe PDFView/Open
08_list of symbol and abbreviations.pdf146.96 kBAdobe PDFView/Open
09_chapter 1.pdf442.61 kBAdobe PDFView/Open
10_chapter 2.pdf481.8 kBAdobe PDFView/Open
11_chapter 3.pdf717.58 kBAdobe PDFView/Open
12_chapter 4.pdf865.06 kBAdobe PDFView/Open
13_chapter 5.pdf1.27 MBAdobe PDFView/Open
14_chapter 6.pdf893.82 kBAdobe PDFView/Open
15_chapter 7.pdf23.4 kBAdobe PDFView/Open
16_references.pdf210.33 kBAdobe PDFView/Open
17_list of publication.pdf8.99 kBAdobe PDFView/Open
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