Hydrothermal and Vapor Phase Transport Growth and Characterization of Pure and Doped ZnO Nanomaterials

Abstract

Among all wide band-gap semiconductors, ZnO has presented a number of hurdles to the newlinescientific community which needs to understood and overcome before the ZnO based devices newlinecan be commercially realized. The interest in ZnO as a semiconducting material has emerged in newlinerecent years due to its wide direct band gap energy of around 3.37 eV and a large exciton binding newlineenergy of 60 meV at room temperature. ZnO has useful optical, chemical, and electrical newlineproperties, and is nontoxic, inexpensive, and chemically stable. It has been investigated newlineintensively for intended applications in optoelectronic devices, high power electronic devices, newlinespintronics, and transparent conductive layer. Over the last decade ZnO nanostructures have been newlinestudied in detail because of their remarkable physical and chemical properties and hence they newlinehave wide range of applications in many fields such as electronics, optics and photonics. ZnO newlinenanostructures can be with a variety of morphologies such as, nanoparticles, nanotubes, newlinenanorods, nanowires and nanobelts, and core-shell nanostructures, etc. Among these, nanowires newlineand nanorods play a key role in the fabrication of efficient nanoscale electronic, optical, newlineoptoelectronic, and electrochemical devices newline