Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/211601
Title: Study of defects in ZnO introduced by ion beam irradiation and implantation
Researcher: Pal, Saptarshi
Guide(s): Jana, Debnarayan
Keywords: Physics
Semiconductors
University: University of Calcutta
Completed Date: 2017
Abstract: Abstract available
Pagination: xiii, 158p.
URI: http://hdl.handle.net/10603/211601
Appears in Departments:Department of Physics

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01_title page.pdfAttached File2.56 kBAdobe PDFView/Open
02_dedication.pdf17.6 kBAdobe PDFView/Open
03_acknowledgement.pdf24.39 kBAdobe PDFView/Open
04_abstract.pdf64.9 kBAdobe PDFView/Open
05_content.pdf90.81 kBAdobe PDFView/Open
06_abbreviation.pdf13.32 kBAdobe PDFView/Open
07_synopsis.pdf32.67 kBAdobe PDFView/Open
08_chapter 1.pdf1.01 MBAdobe PDFView/Open
09_chapter 2.pdf193.7 kBAdobe PDFView/Open
10_chapter 3.pdf821.44 kBAdobe PDFView/Open
11_chapter 4.pdf419.83 kBAdobe PDFView/Open
12_chapter 5.pdf635.66 kBAdobe PDFView/Open
13_chapter 6.pdf368.45 kBAdobe PDFView/Open
14_chapter 7.pdf107.27 kBAdobe PDFView/Open
15_appendix 1.pdf37.25 kBAdobe PDFView/Open
16_appendix 2.pdf17.4 kBAdobe PDFView/Open
17_list of publication.pdf14.29 kBAdobe PDFView/Open
18_conference presentation and workshops.pdf13.4 kBAdobe PDFView/Open
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