Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/204748
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dc.coverage.spatial
dc.date.accessioned2018-05-31T05:46:02Z-
dc.date.available2018-05-31T05:46:02Z-
dc.identifier.urihttp://hdl.handle.net/10603/204748-
dc.description.abstractnewline
dc.format.extentI-XVIII, 1-134
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleBand Gap Engineered Graphene Like Nano Structures For Resonant Tunneling Diodes And Field Effect Transistors
dc.title.alternative
dc.creator.researcherPenchalaiah Palla
dc.subject.keywordField Effect Transistors
dc.subject.keywordGraphene antidot lattices (GALs).
dc.subject.keywordGraphene Nanoelectronics
dc.subject.keywordResonant Tunneling Diodes
dc.subject.keywordSiC, SiO2
dc.description.note
dc.contributor.guideNirmala Grace . A and Raina. J. P.
dc.publisher.placeVellore
dc.publisher.universityVIT University
dc.publisher.institutionSchool of Electronic Engineering
dc.date.registered01/07/2008
dc.date.completed2017
dc.date.awarded21/06/2017
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:School of Electronic Engineering

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01_title.pdfAttached File7.21 MBAdobe PDFView/Open
02_certificate.pdf7.21 MBAdobe PDFView/Open
03_abstract.pdf7.21 MBAdobe PDFView/Open
04_acknowledgement.pdf7.21 MBAdobe PDFView/Open
05-content.pdf7.21 MBAdobe PDFView/Open
06_list of figures &tables.pdf7.21 MBAdobe PDFView/Open
07_chapter1.pdf7.21 MBAdobe PDFView/Open
08_chapter2.pdf7.22 MBAdobe PDFView/Open
09_chapter3.pdf7.21 MBAdobe PDFView/Open
10_chapter4.pdf7.21 MBAdobe PDFView/Open
11_chapter5.pdf7.21 MBAdobe PDFView/Open
12_chapter6.pdf7.21 MBAdobe PDFView/Open
13_chapter7.pdf7.21 MBAdobe PDFView/Open
14_reference.pdf7.23 MBAdobe PDFView/Open


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