Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/204748
Title: Band Gap Engineered Graphene Like Nano Structures For Resonant Tunneling Diodes And Field Effect Transistors
Researcher: Penchalaiah Palla
Guide(s): Nirmala Grace . A and Raina. J. P.
Keywords: Field Effect Transistors
Graphene antidot lattices (GALs).
Graphene Nanoelectronics
Resonant Tunneling Diodes
SiC, SiO2
University: VIT University
Completed Date: 2017
Abstract: newline
Pagination: I-XVIII, 1-134
URI: http://hdl.handle.net/10603/204748
Appears in Departments:School of Electronic Engineering

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01_title.pdfAttached File7.21 MBAdobe PDFView/Open
02_certificate.pdf7.21 MBAdobe PDFView/Open
03_abstract.pdf7.21 MBAdobe PDFView/Open
04_acknowledgement.pdf7.21 MBAdobe PDFView/Open
05-content.pdf7.21 MBAdobe PDFView/Open
06_list of figures &tables.pdf7.21 MBAdobe PDFView/Open
07_chapter1.pdf7.21 MBAdobe PDFView/Open
08_chapter2.pdf7.22 MBAdobe PDFView/Open
09_chapter3.pdf7.21 MBAdobe PDFView/Open
10_chapter4.pdf7.21 MBAdobe PDFView/Open
11_chapter5.pdf7.21 MBAdobe PDFView/Open
12_chapter6.pdf7.21 MBAdobe PDFView/Open
13_chapter7.pdf7.21 MBAdobe PDFView/Open
14_reference.pdf7.23 MBAdobe PDFView/Open
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