1. Shodhganga@INFLIBNET
  2. University of Mysore
  3. Department of Electronics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/204348
Title: An investigation of high dose proton electron and different high energy ion irradiation effects on the electrical characteristics of silicon NPN transistors
Researcher: Bharathi, M. N.
Guide(s): Gnana Prakash, A. P.
Keywords: NPN Transistors
Radiation Environments
University: University of Mysore
Completed Date: 2017
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/204348
Appears in Departments:Department of Electronics

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01_title.pdfAttached File32.56 kBAdobe PDFView/Open
02_certificate.pdf110.09 kBAdobe PDFView/Open
03_acknowledgements.pdf80.03 kBAdobe PDFView/Open
04_table of contents.pdf121.9 kBAdobe PDFView/Open
05_preface.pdf115.49 kBAdobe PDFView/Open
06_list of publications.pdf100.25 kBAdobe PDFView/Open
07_list of tables.pdf30.77 kBAdobe PDFView/Open
08_list of figures.pdf151.4 kBAdobe PDFView/Open
09_abstract.pdf36.98 kBAdobe PDFView/Open
10_chapter 1.pdf415.17 kBAdobe PDFView/Open
11_chapter 2.pdf914.28 kBAdobe PDFView/Open
12_chapter 3.pdf1.08 MBAdobe PDFView/Open
13_chapter 4.pdf1.2 MBAdobe PDFView/Open
14_chapter 5.pdf517.46 kBAdobe PDFView/Open
15_chapter 6.pdf1.15 MBAdobe PDFView/Open
16_chapter 7.pdf664.7 kBAdobe PDFView/Open
17_chapter 8.pdf1.06 MBAdobe PDFView/Open
18_chapter 9.pdf86.3 kBAdobe PDFView/Open
19_references.pdf100.99 kBAdobe PDFView/Open
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