Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/19778
Title: Vtmos-a new logic family for low power digital circuits
Researcher: Ragini, Kanchinireddy
Guide(s): Satyam, M
Jinaga, B C
Keywords: Circuits
Digital
Dynamic
Threshold
Vtmos
Upload Date: 25-Jun-2014
University: Jawaharlal Nehru Technological University, Hyderabad
Completed Date: 2012
Abstract: The need for extending low power circuits increased with the advent of use of large number of portable devices like cell phones, calculators , miniature computers etc. In all these devices one of the burning problems is increasing the life of battery .This can be achieved by reducing the power consumption of the individual circuits .One of the methods of reducing the power consumption is by operating the devices at low currents and low voltages. It is known that MOS devices and circuits, especially CMOS circuits newlineconsume relatively low power .But there seems to be a need to reduce this power further to prolong the life of the battery. MOSFET devices are generally operated above threshold voltages. But the devices can also newlineexhibit control characteristics, even below the threshold voltages .This region of operation of these devices may be called as sub threshold operation. Basically, the principle of sub threshold logic is, operating MOSFET in sub threshold region and using the leakage current in that newlineregion for switching action, there by significantly decreasing the power newlineconsumption. The sub threshold circuits experience large delays and hence they cannot be used in high frequency applications .Several approaches have been made for improving the speed of the devices. newlineDynamic Threshold MOSFET (DTMOS) technique is one such technique where body is connected to gate. This technique provides high current newlinedrive compared to CMOS circuits operated at lower voltages (i.e at sub threshold voltages).The leakage current produced by DTMOS circuits ii during OFF state is comparable with leakage currents of CMOS circuits. To reduce the leakage currents and power dissipation of DTMOS circuits, further a new technique called Variable Threshold MOSFET (VTMOS) technique is proposed in the thesis. newline
Pagination: 226 p. , i-a
URI: http://hdl.handle.net/10603/19778
Appears in Departments:Department of Electronics and Communication Engineering

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01_title.pdfAttached File60.94 kBAdobe PDFView/Open
02_declaration.pdf65.18 kBAdobe PDFView/Open
03_certificate.pdf65.98 kBAdobe PDFView/Open
04_declation.pdf34.92 kBAdobe PDFView/Open
05_acknowledgement.pdf62 kBAdobe PDFView/Open
06_abstract.pdf55.35 kBAdobe PDFView/Open
07_contents.pdf89.44 kBAdobe PDFView/Open
08_list of tables & figures.pdf119.87 kBAdobe PDFView/Open
09_chapter 1.pdf86.58 kBAdobe PDFView/Open
10_chapter 2.pdf558.25 kBAdobe PDFView/Open
11_chapter 3.pdf177.5 kBAdobe PDFView/Open
12_chapter 4.pdf971.12 kBAdobe PDFView/Open
13_chapter 5.pdf1.13 MBAdobe PDFView/Open
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