1. Shodhganga@INFLIBNET
  2. University of Madras
  3. Department of Nuclear Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/192514
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DC FieldValueLanguage
dc.date.accessioned2018-02-19T04:52:15Z-
dc.date.available2018-02-19T04:52:15Z-
dc.identifier.urihttp://hdl.handle.net/10603/192514-
dc.description.abstractInvestigations On Low Energy Ion Implantation Effects In III V Compound Semiconductors newline newline-
dc.languageEnglish-
dc.rightsuniversity-
dc.titleInvestigations On Low Energy Ion Implantation Effects In III V Compound Semiconductors-
dc.creator.researcherK Santhakumar-
dc.contributor.guideV Ravichandran-
dc.publisher.placeChennai-
dc.publisher.universityUniversity of Madras-
dc.publisher.institutionDepartment of Nuclear Physics-
dc.date.registered20/08/1998-
dc.date.completed2003-
dc.format.accompanyingmaterialNone-
dc.source.universityUniversity-
dc.type.degreePh.D.-
Appears in Departments:Department of Nuclear Physics

Files in This Item:
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certificate.pdfAttached File47.89 kBAdobe PDFView/Open
chapter 1.pdf1.57 MBAdobe PDFView/Open
chapter 2.pdf1.43 MBAdobe PDFView/Open
chapter 3.pdf1.52 MBAdobe PDFView/Open
chapter 4.pdf984.81 kBAdobe PDFView/Open
chapter 5.pdf2.13 MBAdobe PDFView/Open
chapter 6.pdf751.06 kBAdobe PDFView/Open
chapter 7.pdf214.24 kBAdobe PDFView/Open
preliminary pages.pdf677.15 kBAdobe PDFView/Open
title.pdf48.58 kBAdobe PDFView/Open
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