1. Shodhganga@INFLIBNET
  2. University of Madras
  3. Department of Nuclear Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/183889
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dc.coverage.spatial
dc.date.accessioned2017-12-08T07:27:53Z-
dc.date.available2017-12-08T07:27:53Z-
dc.identifier.urihttp://hdl.handle.net/10603/183889-
dc.description.abstractInvestigations on low energy ion implantation effects in III V compound semiconductors newline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleInvestigations on low energy ion implantation effects in III V compound semiconductors
dc.title.alternative
dc.creator.researcherSanthakumar.K
dc.description.note
dc.contributor.guideRavichandran.V
dc.publisher.placeChennai
dc.publisher.universityUniversity of Madras
dc.publisher.institutionDepartment of Nuclear Physics
dc.date.registered16/07/1998
dc.date.completed
dc.date.awarded19/08/2003
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Nuclear Physics

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acknowledgement.pdfAttached File157.12 kBAdobe PDFView/Open
certificate.pdf61.05 kBAdobe PDFView/Open
chapter1.pdf1.08 MBAdobe PDFView/Open
chapter2.pdf972.86 kBAdobe PDFView/Open
chapter3.pdf985.93 kBAdobe PDFView/Open
chapter4.pdf666.46 kBAdobe PDFView/Open
chapter5.pdf1.41 MBAdobe PDFView/Open
chapter6.pdf524.24 kBAdobe PDFView/Open
chapter7.pdf147.53 kBAdobe PDFView/Open
contents.pdf66.71 kBAdobe PDFView/Open
declaration.pdf28.91 kBAdobe PDFView/Open
title.pdf26.02 kBAdobe PDFView/Open
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