Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/180641
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dc.coverage.spatial
dc.date.accessioned2017-11-13T09:27:31Z-
dc.date.available2017-11-13T09:27:31Z-
dc.identifier.urihttp://hdl.handle.net/10603/180641-
dc.description.abstractNone newline
dc.format.extent134 p.
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleModeling of subthreshold characteristics of short channel conventional pocket implanted and dual material gate MOSFETs
dc.title.alternative
dc.creator.researcherBaishya, Srimanta
dc.subject.keywordMetal Oxide Semiconductor Field-Effect Transistor (MOSFET)
dc.subject.keywordMetal Oxide Semiconductors (MOS)
dc.subject.keywordSemiconductor devices
dc.subject.keywordShort channel MOS
dc.description.noteReferences p. 131-132
dc.contributor.guideSarkar, C.K. and Mallik, A.
dc.publisher.placeKolkata
dc.publisher.universityJadavpur University
dc.publisher.institutionDepartment of Electronics and Tele-Communication Engineering
dc.date.registeredn.d.
dc.date.completed2007
dc.date.awarded2007
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics and Tele-Communication Engineering

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01_title.pdfAttached File51.52 kBAdobe PDFView/Open
02_dedication.pdf51.23 kBAdobe PDFView/Open
03_certificate.pdf52.56 kBAdobe PDFView/Open
04_list of publication.pdf59.06 kBAdobe PDFView/Open
05_acknowledgement.pdf56.08 kBAdobe PDFView/Open
06_contents.pdf55.02 kBAdobe PDFView/Open
07_chapter 1.pdf170.44 kBAdobe PDFView/Open
08_chapter 2.pdf266.67 kBAdobe PDFView/Open
09_chapter 3.pdf655.43 kBAdobe PDFView/Open
10_chapter 4.pdf421.9 kBAdobe PDFView/Open
11_chapter 5.pdf391.57 kBAdobe PDFView/Open
12_chapter 6.pdf304.65 kBAdobe PDFView/Open
13_chapter 7.pdf74.9 kBAdobe PDFView/Open


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