Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/180641
Title: Modeling of subthreshold characteristics of short channel conventional pocket implanted and dual material gate MOSFETs
Researcher: Baishya, Srimanta
Guide(s): Sarkar, C.K. and Mallik, A.
Keywords: Metal Oxide Semiconductor Field-Effect Transistor (MOSFET)
Metal Oxide Semiconductors (MOS)
Semiconductor devices
Short channel MOS
University: Jadavpur University
Completed Date: 2007
Abstract: None newline
Pagination: 134 p.
URI: http://hdl.handle.net/10603/180641
Appears in Departments:Department of Electronics and Tele-Communication Engineering

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02_dedication.pdf51.23 kBAdobe PDFView/Open
03_certificate.pdf52.56 kBAdobe PDFView/Open
04_list of publication.pdf59.06 kBAdobe PDFView/Open
05_acknowledgement.pdf56.08 kBAdobe PDFView/Open
06_contents.pdf55.02 kBAdobe PDFView/Open
07_chapter 1.pdf170.44 kBAdobe PDFView/Open
08_chapter 2.pdf266.67 kBAdobe PDFView/Open
09_chapter 3.pdf655.43 kBAdobe PDFView/Open
10_chapter 4.pdf421.9 kBAdobe PDFView/Open
11_chapter 5.pdf391.57 kBAdobe PDFView/Open
12_chapter 6.pdf304.65 kBAdobe PDFView/Open
13_chapter 7.pdf74.9 kBAdobe PDFView/Open
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