1. Shodhganga@INFLIBNET
  2. University of Calcutta
  3. Department of Electronic Science
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/173973
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DC FieldValueLanguage
dc.coverage.spatialElectronic Science
dc.date.accessioned2017-10-09T06:19:12Z-
dc.date.available2017-10-09T06:19:12Z-
dc.identifier.urihttp://hdl.handle.net/10603/173973-
dc.description.abstractAbstract not available
dc.format.extentviii, 117p.
dc.languageEnglish US
dc.relationReference available at chapters
dc.rightsuniversity
dc.titleStudies on the electrical and optical characteristics of epitaxial In1 x GaxP and dilute GaAsN
dc.title.alternative
dc.creator.researcherHalder, Nilanjan
dc.subject.keywordElectrical
dc.subject.keywordEpitaxial
dc.subject.keywordGrowth
dc.subject.keywordOptical
dc.subject.keywordTransmission
dc.description.noteData not available
dc.contributor.guideDhar, Sunanda
dc.publisher.placeKolkata
dc.publisher.universityUniversity of Calcutta
dc.publisher.institutionDepartment of Electronic Science
dc.date.registeredn.d.
dc.date.completed2006
dc.date.awardedn.d.
dc.format.dimensions31cm.
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronic Science

Files in This Item:
File Description SizeFormat 
01_title page.pdfAttached File28.79 kBAdobe PDFView/Open
02_dedication.pdf12 kBAdobe PDFView/Open
03_preface.pdf26.87 kBAdobe PDFView/Open
04_acknowledgement.pdf75.74 kBAdobe PDFView/Open
05_content.pdf62.17 kBAdobe PDFView/Open
06_chapter 1.pdf864.03 kBAdobe PDFView/Open
07_chapter 2.pdf986.34 kBAdobe PDFView/Open
08_chapter 3.pdf1.35 MBAdobe PDFView/Open
09_chapter 4.pdf449.22 kBAdobe PDFView/Open
10_chapter 5.pdf342.47 kBAdobe PDFView/Open
11_chapter 6.pdf430.25 kBAdobe PDFView/Open
12_chapter 7.pdf624.82 kBAdobe PDFView/Open
13_conclusion.pdf301.59 kBAdobe PDFView/Open
14_appendix a.pdf132.8 kBAdobe PDFView/Open
15_appendix b.pdf922.83 kBAdobe PDFView/Open
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