1. Shodhganga@INFLIBNET
  2. Karunya University
  3. Department of Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/166234
Title: Modeling and Simulation of InP GaAs based High Electron Mobility Transistors for High Frequency Appliations
Researcher: Ajayan. J
Guide(s): Nirmal. D
Keywords: Modeling and Simulation
University: Karunya University
Completed Date: 2017
Abstract: newline
Pagination: 130 pages
URI: http://hdl.handle.net/10603/166234
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
File Description SizeFormat 
01. first page.pdfAttached File81.15 kBAdobe PDFView/Open
02. decalaration.pdf124.5 kBAdobe PDFView/Open
03. bonafide certificate.pdf64.39 kBAdobe PDFView/Open
04. abstract.pdf13.38 kBAdobe PDFView/Open
05. acknowledgement.pdf5.96 kBAdobe PDFView/Open
06. table of contents.pdf43.42 kBAdobe PDFView/Open
07. list of tables.pdf7.41 kBAdobe PDFView/Open
08. list of figures.pdf104.73 kBAdobe PDFView/Open
09. list of symbols and abbreviations.pdf51.4 kBAdobe PDFView/Open
10. chapter - i.pdf132.76 kBAdobe PDFView/Open
11. chapter - ii.pdf297.18 kBAdobe PDFView/Open
12. chapter - iii.pdf544.76 kBAdobe PDFView/Open
13. chapter - iv.pdf424.14 kBAdobe PDFView/Open
14. chapter - v.pdf416.98 kBAdobe PDFView/Open
17. chapter - viii.pdf73.08 kBAdobe PDFView/Open
18. references.pdf198.19 kBAdobe PDFView/Open
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