1. Shodhganga@INFLIBNET
  2. University of Calcutta
  3. Department of Technology
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/162903
Title: Studies of device parameters of nanoscale double gate si and Ge MOSFETs
Researcher: Bhattacherjee, Swagata
Guide(s): Biswas, Abhijit
Keywords: Device
Double
Gate
Nanoscale
Parameters
University: University of Calcutta
Completed Date: 2011
Abstract: Abstract not available
Pagination: viii, 155p.
URI: http://hdl.handle.net/10603/162903
Appears in Departments:Department of Technology

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01_title page.pdfAttached File38.5 kBAdobe PDFView/Open
02_dedication.pdf5.95 kBAdobe PDFView/Open
03_acknowledgement.pdf27.73 kBAdobe PDFView/Open
04_table of content.pdf97.44 kBAdobe PDFView/Open
05_chapter 1.pdf1.41 MBAdobe PDFView/Open
06_chapter 2.pdf659.93 kBAdobe PDFView/Open
07_chapter 3.pdf882.29 kBAdobe PDFView/Open
08_chapter 4.pdf1.02 MBAdobe PDFView/Open
09_chapter 5.pdf667.34 kBAdobe PDFView/Open
10_chapter 6.pdf1.09 MBAdobe PDFView/Open
11_chapter 7.pdf653.39 kBAdobe PDFView/Open
12_conclusion.pdf230.51 kBAdobe PDFView/Open
13_list of publication.pdf89.44 kBAdobe PDFView/Open
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