Studies of device parameters of nanoscale double gate si and Ge MOSFETs

Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/162903

Full metadata record

DC Field	Value	Language
dc.coverage.spatial	Technology
dc.date.accessioned	2017-07-26T07:22:47Z	-
dc.date.available	2017-07-26T07:22:47Z	-
dc.identifier.uri	http://hdl.handle.net/10603/162903	-
dc.description.abstract	Abstract not available
dc.format.extent	viii, 155p.
dc.language	English US
dc.relation	Reference available at chapters
dc.rights	university
dc.title	Studies of device parameters of nanoscale double gate si and Ge MOSFETs
dc.title.alternative
dc.creator.researcher	Bhattacherjee, Swagata
dc.subject.keyword	Device
dc.subject.keyword	Double
dc.subject.keyword	Gate
dc.subject.keyword	Nanoscale
dc.subject.keyword	Parameters
dc.description.note	Data not available
dc.contributor.guide	Biswas, Abhijit
dc.publisher.place	Kolkata
dc.publisher.university	University of Calcutta
dc.publisher.institution	Department of Technology
dc.date.registered	n.d.
dc.date.completed	2011
dc.date.awarded	n.d.
dc.format.dimensions	31cm.
dc.format.accompanyingmaterial	None
dc.source.university	University
dc.type.degree	Ph.D.
Appears in Departments:	Department of Technology

Files in This Item:

File	Description	Size	Format
01_title page.pdf	Attached File	38.5 kB	Adobe PDF	View/Open
02_dedication.pdf		5.95 kB	Adobe PDF	View/Open
03_acknowledgement.pdf		27.73 kB	Adobe PDF	View/Open
04_table of content.pdf		97.44 kB	Adobe PDF	View/Open
05_chapter 1.pdf		1.41 MB	Adobe PDF	View/Open
06_chapter 2.pdf		659.93 kB	Adobe PDF	View/Open
07_chapter 3.pdf		882.29 kB	Adobe PDF	View/Open
08_chapter 4.pdf		1.02 MB	Adobe PDF	View/Open
09_chapter 5.pdf		667.34 kB	Adobe PDF	View/Open
10_chapter 6.pdf		1.09 MB	Adobe PDF	View/Open
11_chapter 7.pdf		653.39 kB	Adobe PDF	View/Open
12_conclusion.pdf		230.51 kB	Adobe PDF	View/Open
13_list of publication.pdf		89.44 kB	Adobe PDF	View/Open