1. Shodhganga@INFLIBNET
  2. University of Calcutta
  3. Department of Technology
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/162143
Title: Some studies on the D C and high frequency properties of indium phosphide and gallium arsenide impatt devices
Researcher: Bandyopadhyay, Jyotiprasad
Guide(s): Roy, S K
Keywords: Devices
Frequency
Gallium
Indium
Phosphide
University: University of Calcutta
Completed Date: 1984
Abstract: Abstract not available
Pagination: vii, 247p.
URI: http://hdl.handle.net/10603/162143
Appears in Departments:Department of Technology

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01_title page.pdfAttached File24.67 kBAdobe PDFView/Open
02_preface.pdf68.9 kBAdobe PDFView/Open
03_content.pdf176.08 kBAdobe PDFView/Open
04_chapter 1.pdf485.24 kBAdobe PDFView/Open
05_chapter 2.pdf3.08 MBAdobe PDFView/Open
06_chapter 3.pdf1.09 MBAdobe PDFView/Open
07_chapter 4.pdf1.35 MBAdobe PDFView/Open
08_chapter 5.pdf1.68 MBAdobe PDFView/Open
09_chapter 6.pdf1.23 MBAdobe PDFView/Open
10_chapter 7.pdf1.49 MBAdobe PDFView/Open
11_chapter 8.pdf914.1 kBAdobe PDFView/Open
12_chapter 9.pdf934.34 kBAdobe PDFView/Open
13_bibliography.pdf690.99 kBAdobe PDFView/Open
14_list of research papers on which the thesis is based.pdf109.03 kBAdobe PDFView/Open
15_appendix 1.pdf39.06 kBAdobe PDFView/Open
16_appendix 2.pdf63.23 kBAdobe PDFView/Open
17_list of symbols.pdf180.56 kBAdobe PDFView/Open
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