Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/153144
Title: Modeling and Optimization of Superjunction Power Metal Oxide Semiconductor Field Effect Transistors MOSFETs
Researcher: Sharma Deepti
Guide(s): Rakesh Vaid
Keywords: Power MOSFET, superjunction, silicon limit, buried oxide, SIMOX
University: University of Jammu
Completed Date: 06-06-2016
Abstract: Modeling and Optimization of Superjunction Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) newline
Pagination: Font-12 and Pages-213
URI: http://hdl.handle.net/10603/153144
Appears in Departments:Department of Physics & Electronics

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01_title.pdf.pdfAttached File61.84 kBAdobe PDFView/Open
02_certificates.pdf.pdf61 kBAdobe PDFView/Open
03_acknowledgements.pdf.pdf52.62 kBAdobe PDFView/Open
04_contents.pdf.pdf65.65 kBAdobe PDFView/Open
05_preface.pdf.pdf94.39 kBAdobe PDFView/Open
06_list of tables figures.pdf.pdf31.82 kBAdobe PDFView/Open
07_chapter1.pdf.pdf434.78 kBAdobe PDFView/Open
08_chapter 2.pdf.pdf651.79 kBAdobe PDFView/Open
09_chapter 3.pdf.pdf937.49 kBAdobe PDFView/Open
10_chapter 4.pdf.pdf1.41 MBAdobe PDFView/Open
11_chapter 5.pdf.pdf964.9 kBAdobe PDFView/Open
12_chapter 6.pdf.pdf73.78 kBAdobe PDFView/Open
13_references.pdf.pdf149.33 kBAdobe PDFView/Open
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