Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/140608
Title: Physics and characterisation of ohmic contacts to GaAs
Researcher: Gupta, Ram P
Guide(s): Khokle, W S
Keywords: Metal-semiconductor ohmic structure, Gallium vacancy diffusion model, Role of gallium, Ohmic contact fabrication technology, Gaas-au system
University: Savitribai Phule Pune University
Completed Date: 1988
Abstract: Abstract available newline newline
Pagination: xi, 175p.
URI: http://hdl.handle.net/10603/140608
Appears in Departments:Department of Physics

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01_title.pdfAttached File129.43 kBAdobe PDFView/Open
02_certificate.pdf177.97 kBAdobe PDFView/Open
03_abstract.pdf594.61 kBAdobe PDFView/Open
04_publications.pdf65.05 kBAdobe PDFView/Open
05_contents.pdf67.45 kBAdobe PDFView/Open
06_chapter 1.pdf1.51 MBAdobe PDFView/Open
07_chapter 2.pdf2.08 MBAdobe PDFView/Open
08_chapter 3.pdf1.3 MBAdobe PDFView/Open
09_chapter 4.pdf639.37 kBAdobe PDFView/Open
10_chapter 5.pdf3.25 MBAdobe PDFView/Open
11_chapter 6.pdf1.1 MBAdobe PDFView/Open
12_concluding remarks.pdf1.26 MBAdobe PDFView/Open
13_acknowledgement.pdf750.31 kBAdobe PDFView/Open
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