1. Shodhganga@INFLIBNET
  2. Savitribai Phule Pune University
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/133569
Title: Studies on the _i_ depth distribution of the carrier lifetime in crystalline silicon and _ii_ damage induced in MOS structure by MeV energy electrons and swift heavy ions
Researcher: Shinde, Ninad Shankar
Guide(s): Dhole, S D
Keywords: Radiation sources, Theory of carrier recombination, Trap density estimation, MOS parameters, MOSFET
University: Savitribai Phule Pune University
Completed Date: 2003
Abstract: Abstract not available newline
Pagination: iv, 217p.
URI: http://hdl.handle.net/10603/133569
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
/01_title.pdfAttached File25.63 kBAdobe PDFView/Open
01_title.pdf25.63 kBAdobe PDFView/Open
/02_certificate.pdf244.32 kBAdobe PDFView/Open
02_certificate.pdf244.32 kBAdobe PDFView/Open
03_acknowledgement.pdf351.24 kBAdobe PDFView/Open
04_contents.pdf95.02 kBAdobe PDFView/Open
05_chapter 1.pdf6.29 MBAdobe PDFView/Open
06_chapter 2.pdf9.09 MBAdobe PDFView/Open
07_chapter 3.pdf3.86 MBAdobe PDFView/Open
08_chapter 4.pdf2.67 MBAdobe PDFView/Open
09_chapter 5.pdf1.9 MBAdobe PDFView/Open
10_list of publications.pdf36.3 kBAdobe PDFView/Open
Show full item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: