Quantum Modeling of Silicon on Insulator Nanoscale Double Gate Field Effect Transistor

Abstract

In the recent years, the development of VLSI technology is mainly due to the newlineminiaturization of semiconductor devices which, in turn, is heavily dependent on the newlineadvancement of the Field-Effect Transistor (FET) technology. As the channel length newlineof conventional planar metal oxide semiconductor field effect transistor shrink into newlinethe nanometer regime, performance of the devices becomes degraded mainly because newlineof short channel effects that arise due to weakened gate control. The Silicon-on- newlineInsulator Nanowire Field Effect Transistor with multiple gates around the silicon newlinechannel that can significantly improve the gate control are considered to be promising newlinecandidates for the next generation transistors and have drawn considerable attention newlinerecently. In addition to the effective suppression of short channel effects, the SOI newlineNanoscale MOSFET with multiple gates shows excellent current drive and they are newlinealso compatible with conventional CMOS processes. newlineThin film Silicon-on-insulator (SOI) technology has become an increasingly active newlineresearch area offering potential advantages over bulk silicon technology for high newlinespeed digital circuit applications. SOI technology offers several advantages such as newlineimproved radiation hardness, reduced parasitic capacitances, higher packing density newlineand possible applications at higher temperature. In addition to this Silicon-oninsulator newline(SOI) MOS devices are given much attention owing to their advantages of newlinehigher circuit speed, greater immunity to radiation induced errors, lower power newlineconsumption, attenuated short channel effects and compatibility with existing IC newlinefabrication process. newlineThe FETs can further be used to design digital circuits where the performance of the newlineoverall circuit can be measured in terms of on-off characteristics and speed of the newlineoverall circuit. In addition to digital circuits, Double-Gate SOI MOSFETs can also be newlineused in analog RF wireless communication applications.