Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/126170
Title: Study of grain boundary passivation by various techniques and its effect on the transport properties of polycrystalline silicon
Researcher: Arole, Vineeta Manohar
Guide(s): Takwale, M G
Keywords: Grain Boundary Passivation, Transport Properties, Polycrystalline Silicon, Polysilicon Wafer, Polycrystalline Silicon
University: Savitribai Phule Pune University
Completed Date: 1988
Abstract: Abstract not available newline newline
Pagination: 99p.
URI: http://hdl.handle.net/10603/126170
Appears in Departments:Department of Physics

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/01_title.pdfAttached File23.69 kBAdobe PDFView/Open
01_title.pdf23.69 kBAdobe PDFView/Open
/02_certificate.pdf157.45 kBAdobe PDFView/Open
02_certificate.pdf157.45 kBAdobe PDFView/Open
03_index.pdf56.29 kBAdobe PDFView/Open
04_introduction.pdf2.81 MBAdobe PDFView/Open
05_chapter 1.pdf856.67 kBAdobe PDFView/Open
06_chapter 2.pdf2.46 MBAdobe PDFView/Open
07_chapter 3.pdf856.39 kBAdobe PDFView/Open
08_chapter 4.pdf633.34 kBAdobe PDFView/Open
09_chapter 5.pdf1.12 MBAdobe PDFView/Open
10_chapter 6.pdf2.31 MBAdobe PDFView/Open
11_conclusion.pdf1 MBAdobe PDFView/Open
12_scope for future work.pdf90.29 kBAdobe PDFView/Open
13_publications.pdf45.9 kBAdobe PDFView/Open
14_acknowledgement.pdf446.02 kBAdobe PDFView/Open
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