Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/126076
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DC FieldValueLanguage
dc.coverage.spatialPhysics
dc.date.accessioned2017-01-24T05:46:00Z-
dc.date.available2017-01-24T05:46:00Z-
dc.identifier.urihttp://hdl.handle.net/10603/126076-
dc.description.abstractAbstract not available newline newline
dc.format.extent124P.
dc.languageEnglish
dc.relation-
dc.rightsuniversity
dc.titleElectronic properties of modified gallium arsenide surfaces and interfaces
dc.title.alternative-
dc.creator.researcherManorama, Vardhireddy
dc.subject.keywordSulphur and phosphorous, Fermi level pinning, Heterojunction, Semiconductor, Ohmic ocntact
dc.description.noteAppendix p. 109-124
dc.contributor.guideBhoraskar, S V and Rao, V J
dc.publisher.placePune
dc.publisher.universitySavitribai Phule Pune University
dc.publisher.institutionDepartment of Physics
dc.date.registeredn.d.
dc.date.completed1989
dc.date.awardedn.d.
dc.format.dimensions-
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

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/01_title.pdfAttached File23.11 kBAdobe PDFView/Open
01_title.pdf23.11 kBAdobe PDFView/Open
/02_certificate.pdf192.25 kBAdobe PDFView/Open
02_certificate.pdf192.25 kBAdobe PDFView/Open
03_acknowledgement.pdf513.33 kBAdobe PDFView/Open
04_contents.pdf675.71 kBAdobe PDFView/Open
05_chapter 1.pdf2.53 MBAdobe PDFView/Open
06_chapter 2.pdf1.14 MBAdobe PDFView/Open
07_chapter 3.pdf739.23 kBAdobe PDFView/Open
08_chapter 4.pdf1.38 MBAdobe PDFView/Open
09_chapter 5.pdf4.13 MBAdobe PDFView/Open
10_chapter 6.pdf2.83 MBAdobe PDFView/Open
11_appendix.pdf1.14 MBAdobe PDFView/Open
12_list of publications.pdf63.79 kBAdobe PDFView/Open


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