Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/117547
Title: Design and Analysis of Breakdown Voltage Improvement Techniques in GaN based HEMT for High Power Applications
Researcher: Binola K Jebalin I. V
Guide(s): Shobha Rekh. A
Keywords: Design and Analysis of Breakdown
University: Karunya University
Completed Date: 15/10/2015
Abstract: newline
Pagination: A-4
URI: http://hdl.handle.net/10603/117547
Appears in Departments:Department of Electronics and Communication Engineering

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chapter iii.pdfAttached File368.7 kBAdobe PDFView/Open
chapter ii.pdf334.55 kBAdobe PDFView/Open
chapter i.pdf168.46 kBAdobe PDFView/Open
chapter iv.pdf380.57 kBAdobe PDFView/Open
chapter viii.pdf9.97 kBAdobe PDFView/Open
chapter vii.pdf130.5 kBAdobe PDFView/Open
chapter vi.pdf194.33 kBAdobe PDFView/Open
chapter v.pdf266.09 kBAdobe PDFView/Open
reference.pdf254.77 kBAdobe PDFView/Open
title.pdf315.75 kBAdobe PDFView/Open
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