Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/117547
Title: | Design and Analysis of Breakdown Voltage Improvement Techniques in GaN based HEMT for High Power Applications |
Researcher: | Binola K Jebalin I. V |
Guide(s): | Shobha Rekh. A |
Keywords: | Design and Analysis of Breakdown |
University: | Karunya University |
Completed Date: | 15/10/2015 |
Abstract: | newline |
Pagination: | A-4 |
URI: | http://hdl.handle.net/10603/117547 |
Appears in Departments: | Department of Electronics and Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
chapter iii.pdf | Attached File | 368.7 kB | Adobe PDF | View/Open |
chapter ii.pdf | 334.55 kB | Adobe PDF | View/Open | |
chapter i.pdf | 168.46 kB | Adobe PDF | View/Open | |
chapter iv.pdf | 380.57 kB | Adobe PDF | View/Open | |
chapter viii.pdf | 9.97 kB | Adobe PDF | View/Open | |
chapter vii.pdf | 130.5 kB | Adobe PDF | View/Open | |
chapter vi.pdf | 194.33 kB | Adobe PDF | View/Open | |
chapter v.pdf | 266.09 kB | Adobe PDF | View/Open | |
reference.pdf | 254.77 kB | Adobe PDF | View/Open | |
title.pdf | 315.75 kB | Adobe PDF | View/Open |
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