Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/257813
Title: Majority Gate Based High Performance Memory Cell Design Withleast Feature Size
Researcher: Amanpreet Sandhu
Guide(s): Sheifali Gupta
Keywords: Engineering and Technology,Engineering,Engineering Electrical and Electronic
University: Chitkara University, Punjab
Completed Date: 2019
Abstract: The Conventional Complementary Metal oxide semiconductor (CMOS) technology have been newlinerevolutionized from the past few decades. However, the CMOS circuits faces serious constraints newlinelike short channel effects, quantum effects, doping fluctuations at the nanoscale which limits them newlineto further scaling down at nano meter range. Due to these limitations, the current trends of CMOS newlinewill saturate in the near future. Researchers are in search of new nanotechnologies which can take newlineover the limitations of traditional CMOS device design. Among various existing nanotechnologies, newlineQuantum dot Cellular Automata (QCA) provides a new solution at nanocircuit design. It is one of newlinethe innovative technologies that can overcome all the mentioned disadvantages of present CMOS newlinecircuits and can design the circuits at the nano scale. QCA represents the information in binary newlineform only. newline
Pagination: 
URI: http://hdl.handle.net/10603/257813
Appears in Departments:Faculty of Electronics

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01_abstract.pdfAttached File86.45 kBAdobe PDFView/Open
02_title.pdf170.94 kBAdobe PDFView/Open
03_deceleration_contents.pdf418.95 kBAdobe PDFView/Open
04_ch1.pdf566.78 kBAdobe PDFView/Open
05_ch2.pdf274.03 kBAdobe PDFView/Open
06_ch3.pdf305.61 kBAdobe PDFView/Open
07_ch4.pdf714.8 kBAdobe PDFView/Open
08_ch5.pdf445.24 kBAdobe PDFView/Open
09_ch6.pdf434.57 kBAdobe PDFView/Open
10_ch7.pdf579.62 kBAdobe PDFView/Open
11_ch8.pdf312.54 kBAdobe PDFView/Open
12_ch9.pdf150.69 kBAdobe PDFView/Open
13_references.pdf386.9 kBAdobe PDFView/Open
front pages.pdf511.48 kBAdobe PDFView/Open


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