Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/8775
Title: Study of capacitive type RF MEMS switch: design, fabrication and characterization
Researcher: Maninder Kaur
Guide(s): Dinesh Kumar
Rangra, K J
Keywords: Electronic Science
Upload Date: 14-May-2013
University: Kurukshetra University
Completed Date: 2012
Abstract: The present study focuses on the design, development and characterization of RF-MEMS capacitive shunt switches. The study is inspired due to the exceptional performance of electrostatic RF MEMS switches over the contemporary state-of-art solid-state devices and their potential applications in communications field. For higher frequency bands, capacitive type switches are preferred over the ohmic type switches. This work is initiated due to the limitations of well-known MEMS capacitive switches, such as high actuation voltage, low capacitance ratio, low isolation, high insertion loss, etc. To obviate all these problems, a capacitive switch based on micro-torsion actuator configuration known as quotSYMMETRIC TOGGLE SWITCHquot is optimized to achieve low actuation voltages with high RF performance. Low actuation voltage is achieved by optimizing the mechanical parameters of the torsion actuator and RF performance enhancement is done by incorporating floating metal layer design and high-k dielectric materials as a dielectric layer. CoventorWare and HFSS (High Frequency Structure Simulator) are used for mechanical and electrical optimization of STS. The fabrication is based on surface micromachining techniques, standard IC processing steps and metal electroplating. The main features of the fabricated capacitive STS having SiO2 as a dielectric layer are: the actuation voltage between 5 - 15 newlineVolts, Isolation _ 20 dB and Insertion loss _ 0.7 dB in X (8 GHz - 12 GHz) and Ku (12 GHz - 17 GHz) bands. The measured capacitance ratio is 48 and 77. Fabricated switches have successfully completed more than one million switching cycles without switching failure. The optimized STS using HfO2 as a dielectric layer have been designed and fabricated and capacitance ratio increases to almost 10 times, with actuation voltages still between 5 - 15 Volts. Also, SPDT based on SiO2 and HfO2 dielectrics are designed and fabricated. Better RF performance and high capacitance ratio is achieved with almost 50% size reduction by using high-k dielectric
Pagination: 132p.
URI: http://hdl.handle.net/10603/8775
Appears in Departments:Department of Electronic Sc.

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01_title.pdfAttached File178.48 kBAdobe PDFView/Open
02_declaration.pdf43.2 kBAdobe PDFView/Open
03_certificate.pdf43.76 kBAdobe PDFView/Open
04_acknowledgements.pdf39.9 kBAdobe PDFView/Open
05_contents.pdf35.47 kBAdobe PDFView/Open
06_list of figures.pdf35.07 kBAdobe PDFView/Open
07_list of tables.pdf30.99 kBAdobe PDFView/Open
08_abstract.pdf41.78 kBAdobe PDFView/Open
09_chapter 1.pdf166.7 kBAdobe PDFView/Open
10_chapter 2.pdf506.72 kBAdobe PDFView/Open
11_chapter 3.pdf11.64 MBAdobe PDFView/Open
12_chapter 4.pdf3.39 MBAdobe PDFView/Open
13_chapter 5.pdf1.26 MBAdobe PDFView/Open
14_chapter 6.pdf83.86 kBAdobe PDFView/Open
15_appendix.pdf95.44 kBAdobe PDFView/Open


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