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Title: Magnetism in transition metal based dilute magnetic semiconductor compounds
Researcher: Singh, Hardev
Guide(s): Manish Kumar
Keywords: Spintronics
dilute magnetic
Upload Date: 14-May-2013
University: Kurukshetra University
Completed Date: 2012
Abstract: The magnetic devices serve as the basis for information processing and storage. In particular, magnetism in metals has been the backbone of information storage from many years. Further, advances in this area may come from another type of magnetic devices i.e. the devices which manipulate both the spin and the charge of the electron. These are so called spintronic devices and may lead to more exotic information devices, capable of a wide variety of functionality. A major hindrance for the practical implementation of the spintronic devices is that these require efficient spin-polarized carrier injection and transport. Conventional ferromagnetic metals are often incompatible with existing semiconductor technology due to not having 100 % spin polarization. Moreover, their spin injection efficiency is often very low due to resistivity differences and the formation of Schottky barriers. DMS may offer a solution to this problem. DMS are the conventional semiconductors in which appropriate fraction of atoms is substituted by the elements which are capable to add localized magnetic moments. Due to this substitution, these materials not only retain the semiconducting properties but can also possess well-defined magnetic properties (e.g. paramagnetic, anti-ferromagnetic or ferromagnetic) that the conventional semiconductors do not have. These compounds show 100 % spin polarization at Fermi level (EF) and can be characterized as half metallic (HM) ferromagnets.They present promising candidature for spintronic devices due to their peculiar property of utilizing both, charge and spin of electrons to create new functionalities beyond conventional semiconductors. Hence, it is suggested that DMS compounds are the building blocks of novel technologies for nonvolatile memories, devices with increased data processing speed, large data storage and potentially leads to instant-on computers, where no boot up is required.
Pagination: xiii, 163p.
Appears in Departments:Department of Physics

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01_title.pdfAttached File87.66 kBAdobe PDFView/Open
02_summary.pdf96.49 kBAdobe PDFView/Open
03_list of publications.pdf57.88 kBAdobe PDFView/Open
04_declaration.pdf71.34 kBAdobe PDFView/Open
05_certificate.pdf94.99 kBAdobe PDFView/Open
06_abstract.pdf75.94 kBAdobe PDFView/Open
07_acknowledgements.pdf37.95 kBAdobe PDFView/Open
08_contents.pdf41.14 kBAdobe PDFView/Open
09_chapter 1.pdf358.54 kBAdobe PDFView/Open
10_chapter 2.pdf1.94 MBAdobe PDFView/Open
11_chapter 3.pdf565.35 kBAdobe PDFView/Open
12_chapter 4.pdf661.12 kBAdobe PDFView/Open
13_chapter 5.pdf465.9 kBAdobe PDFView/Open
14_chapter 6.pdf80.83 kBAdobe PDFView/Open

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