Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/5860
Title: Preparation and characterization of High k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric applications
Researcher: Philip, Anu
Guide(s): Rajeev Kumar K
Keywords: Instrumentation
High-k Aluminum Oxide
Atomic Layer
Gate Dielectric applications
Upload Date: 24-Dec-2012
University: Cochin University of Science and Technology
Completed Date: December, 2011
Abstract: None
Pagination: 202p.
URI: http://hdl.handle.net/10603/5860
Appears in Departments:Department of Instrumentation

Files in This Item:
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01_title.pdfAttached File226.1 kBAdobe PDFView/Open
02_certificate.pdf137.55 kBAdobe PDFView/Open
03_declaration.pdf105.04 kBAdobe PDFView/Open
04_acknowledgement.pdf208.19 kBAdobe PDFView/Open
05_contents.pdf146.92 kBAdobe PDFView/Open
06_preface.pdf208.4 kBAdobe PDFView/Open
07_chapter 1.pdf937.18 kBAdobe PDFView/Open
08_chapter 2.pdf771.29 kBAdobe PDFView/Open
09_chapter 3.pdf1.22 MBAdobe PDFView/Open
10_chapter 4.pdf685.02 kBAdobe PDFView/Open
11_chapter 5.pdf857 kBAdobe PDFView/Open
12_chapter 6.pdf1.32 MBAdobe PDFView/Open
13_chapter 7.pdf2.8 MBAdobe PDFView/Open
14_chapter 8.pdf302.74 kBAdobe PDFView/Open


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