Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/4233
Title: Ion beam modification of GaN based Semiconductor Heterostructures
Researcher: Sathish, N
Guide(s): Pathak, Anand P
Keywords: Ion Solid Interaction
Nuclear energy loss
Electronic energy loss
IUAC accelerator facility
Physics
Upload Date: 14-Aug-2012
University: University of Hyderabad
Completed Date: June, 2009
Abstract: None
Pagination: 129p.
URI: http://hdl.handle.net/10603/4233
Appears in Departments:School of Physics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File48.17 kBAdobe PDFView/Open
02_declaration.pdf50.11 kBAdobe PDFView/Open
03_certificate.pdf50.15 kBAdobe PDFView/Open
04_acknowledgements.pdf90.34 kBAdobe PDFView/Open
05_dedication.pdf83.75 kBAdobe PDFView/Open
06_table of contents.pdf74.26 kBAdobe PDFView/Open
07_chapter 1.pdf965.83 kBAdobe PDFView/Open
08_chapter 2.pdf1.67 MBAdobe PDFView/Open
09_chapter 3.pdf679.68 kBAdobe PDFView/Open
10_chapter 4.pdf748.56 kBAdobe PDFView/Open
11_chapter 5.pdf971.28 kBAdobe PDFView/Open
12_chapter 6.pdf405.59 kBAdobe PDFView/Open
13_chapter 7.pdf162.33 kBAdobe PDFView/Open
14_appendix.pdf129.11 kBAdobe PDFView/Open


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