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Title: Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon
Researcher: Nagarajan, M
Guide(s): Baskar, K
Keywords: Gallium Arsenide
Indium Phosphide
Zinc Arsenide
Upload Date: 17-Oct-2014
University: Anna University
Completed Date: n.d.
Abstract: Now a days both IIV and IIIV compound semiconductors such as newlineZinc Arsenide ZA and Indium Phosphide InP possess potential newlinephysical properties ZA is a new class of IIV compound semiconductor newlinewith direct bandgap of 10 V at room temperature which therefore makes an newlineimportant material for infrared emitters detectors and solar cells IIIV newlinecompound semiconductor InP with direct bandgap of 13 V at room newlinetemperature plays a major role in high speed devices and also in fiberoptic newlinecommunication systems On the otherhand Silicon Si is an indirect band newlinegap material and it is a dominating material in microelectronic industry newlinebecause of high thermal conductivity mechanical strength large area and low newlinecost but the disadvantage of this material is the poor light emission In order newlineto utilize the advantages heteroepitaxy of InP on Si substrate is of great newlineinterest since it offers a promising opportunity for monolithic integration of newlineInP based optoelectronic and high speed devices with Si integrated circuits newlineAmong the several techniques liquid phase epitaxy LPE and newlinevapour phase epitaxy VPE have long been the prevailing methods for newlinefabrication of optoelectronic devices as well as for the choice of processing newlinematerials in laboratory environment for research on newer semiconductor newlinedevices Both possess near equilibrium growth techniques capable of newlineproducing epitaxial layers with low dislocation density and good electrical newlinecharacteristics newlineGrowth of good quality epitaxial layers is essential for both newlinefundamental studies as well as for device fabrication The LPE system with newlinehorizontal sliding boat has been developed indigenously Using the LPE newlinesystem ZA epilayers have been grown on GaAs 100 substrates with newlinedifferent Zinc Zn concentrations by adopting supercooling technique Best newlinelayer of ZA has been obtained at 688 C with a cooling rate of 02 Cmin newlineOther growth parameters have been found to result in poor surface newlinemorphology or dissolution of the substrate due to insufficient supersaturation newline newline
Pagination: xvii,132p.
Appears in Departments:Faculty of Science and Humanities

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01_title.pdfAttached File171.94 kBAdobe PDFView/Open
02_certificate.pdf2.1 MBAdobe PDFView/Open
03_abstract.pdf83.16 kBAdobe PDFView/Open
04_acknowledgement.pdf70.73 kBAdobe PDFView/Open
05_contents.pdf131.93 kBAdobe PDFView/Open
06_chapter 1.pdf3.4 MBAdobe PDFView/Open
07_chapter 2.pdf4.5 MBAdobe PDFView/Open
08_chapter 3.pdf2.77 MBAdobe PDFView/Open
09_chapter 4.pdf6.29 MBAdobe PDFView/Open
10_chapter 5.pdf86.24 kBAdobe PDFView/Open
11_references.pdf136.13 kBAdobe PDFView/Open
12_publications.pdf70.79 kBAdobe PDFView/Open
13_vitae.pdf60.36 kBAdobe PDFView/Open

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