Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/24925
Title: Preparation and characterization Of Cu2s thin films for possible applications
Researcher: Ramya, M
Guide(s): Ganesan, S
Keywords: deposition
Raman spectroscopy
semiconductor material
Thin Films
Xray diffraction
Upload Date: 11-Sep-2014
University: Anna University
Completed Date: n.d.
Abstract: newline newlineThis thesis presents the results of investigation of vacuum newlineevaporated Cu2S film and the process involved during deposition Cu 2S is an newlineinteresting semiconductor material with electrical optical and physical newlineproperties varying significantly as a function of composition It is a suitable newlinematerial to be used in solar cell because it has very high absorption coefficient newlinefor wavelength constituting the solar spectrum Semiconducting copper newlinesulphide Cu6S thin films were deposited on glass substrates at room newlinetemperature by vacuum evaporation method with four different thicknesses newlineFilms were deposited under a pressure of 10 6 Torr at an evaporation rate of newline3Å sec Rotary drive was employed to obtain uniformity in film thickness newlineThicknesses of the film were measured by using quartz crystal monitor newlineCharacterization of the film has been carried out using Xray diffraction newlineXRD and Raman spectroscopy The two point probe method was used for newlinethe investigation of electrical properties and four point probe was used for newlineresistivity analysis Hall effects measurements were carried out to determine newlinethe size dependent electrical properties of the film newlineXray diffraction studies show that lower thickness films are a newlinemixture of amorphous and polycrystalline while higher thickness films bear newlinepolycrystalline nature It was also observed that at lower thickness the formed newlinefilm is a mixture of either or both phases of chalcosite Cu2S and covellite newlineCuS whereas higher thickness Cu2S film changes its crystal structure from newlineCu2S to CuS and exhibit deviation in the composition of the film Raman newlinespectroscopy was used as a rapid identification of the composition of the film newlineRaman shifts at 472 cm and 474 cm indicates that the films deposited at newlinelower thickness were chemically close to CuS copper rich phase while newlinehigher thickness films were CuS sulphurrich phase This change in the newlinecomposition of the film at higher thickness meant that the films were newlinedeposited as layers with those layers next to substrate having a composition newlinewith a higher CuS
Pagination: xx,177p.
URI: http://hdl.handle.net/10603/24925
Appears in Departments:Faculty of Science and Humanities

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01_title.pdfAttached File149.15 kBAdobe PDFView/Open
02_certificate.pdf13.34 MBAdobe PDFView/Open
03_abstract.pdf81.32 kBAdobe PDFView/Open
04_acknowledgement.pdf78.23 kBAdobe PDFView/Open
05_contents.pdf140.58 kBAdobe PDFView/Open
06_chapter 1.pdf202.94 kBAdobe PDFView/Open
07_chapter 2.pdf177.53 kBAdobe PDFView/Open
08_chapter 3.pdf1.44 MBAdobe PDFView/Open
09_chapter 4.pdf500.58 kBAdobe PDFView/Open
10_chapter 5.pdf2.18 MBAdobe PDFView/Open
11_chapter 6.pdf523.25 kBAdobe PDFView/Open
12_chapter 7.pdf1.37 MBAdobe PDFView/Open
13_chapter 8.pdf588.92 kBAdobe PDFView/Open
14_chapter 9.pdf72.72 kBAdobe PDFView/Open
15_references.pdf185.58 kBAdobe PDFView/Open
16_publications.pdf78.6 kBAdobe PDFView/Open
17_vitae.pdf48.49 kBAdobe PDFView/Open


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