Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/187029
Title: Studies on characteristics of III V compound semiconductor based HENTMODFET to use in analog VLSI circuits
Researcher: Lenka, Trupti Ranjan
Guide(s): Panda, A K
Keywords: Impurities
Lonized
Mobility
Physical
Scattering
University: Sambalpur University
Completed Date: 2012
Abstract: Abstract not available
Pagination: xxii, 223p.
URI: http://hdl.handle.net/10603/187029
Appears in Departments:Department of Engineering

Files in This Item:
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01_title page.pdfAttached File23.48 kBAdobe PDFView/Open
02_certificate.pdf45.06 kBAdobe PDFView/Open
03_declaration.pdf23.7 kBAdobe PDFView/Open
04_acknowledgement.pdf99.94 kBAdobe PDFView/Open
05_table of content.pdf144.67 kBAdobe PDFView/Open
06_list of figures.pdf418.19 kBAdobe PDFView/Open
07_list of table.pdf62.97 kBAdobe PDFView/Open
08_chapter 1.pdf465.95 kBAdobe PDFView/Open
09_chapter 2.pdf3.45 MBAdobe PDFView/Open
10_chapter 3.pdf960.15 kBAdobe PDFView/Open
11_chapter 4.pdf6.98 MBAdobe PDFView/Open
12_chapter 5.pdf4.61 MBAdobe PDFView/Open
13_chapter 6.pdf5.67 MBAdobe PDFView/Open
14_chapter 7.pdf2.74 MBAdobe PDFView/Open
15_chapter 8.pdf3.7 MBAdobe PDFView/Open
16_conclusion of the thesis.pdf335.85 kBAdobe PDFView/Open
17_authoress list of publications.pdf153.49 kBAdobe PDFView/Open
18_references.pdf954.82 kBAdobe PDFView/Open


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