Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/140226
Title: Development of Thermally Stimulated Exoelectron Emission _TSEE_ technique for the detection and characterisation of surface and interface defects in silicon _Si_ and gallium arsenide _GaAs_
Researcher: Railkar, Tarak A
Guide(s): Bhoraskar, S V
Keywords: Semiconductors
Gamma irradiation
Gallium arsenide
Exoemission
Polycrystalline
University: Savitribai Phule Pune University
Completed Date: 1994
Abstract: Abstract not available newline
Pagination: 141p.
URI: http://hdl.handle.net/10603/140226
Appears in Departments:Department of Physics

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01_title.pdf22.96 kBAdobe PDFView/Open
/02_certificate.pdf27.4 kBAdobe PDFView/Open
02_certificate.pdf27.4 kBAdobe PDFView/Open
03_acknowledgement.pdf115.63 kBAdobe PDFView/Open
04_contents.pdf138.13 kBAdobe PDFView/Open
05_chapter 1.pdf163.53 kBAdobe PDFView/Open
06_chapter 2.pdf1.42 MBAdobe PDFView/Open
07_chapter 3.pdf1.29 MBAdobe PDFView/Open
08_chapter 4.pdf1.19 MBAdobe PDFView/Open
09_chapter 5.pdf1.06 MBAdobe PDFView/Open
10_chapter 6.pdf482.06 kBAdobe PDFView/Open
11_chapter 7.pdf428.74 kBAdobe PDFView/Open
12_chapter 8.pdf88.95 kBAdobe PDFView/Open
13_list of publications.pdf50.59 kBAdobe PDFView/Open


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