Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/12988
Title: Electrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon hydrogenated amorphous silicon and chemically deposited cadmium sulphide
Researcher: Rajeev Kumar K
Guide(s): Sathianandan K
Keywords: Physics
Cadmium Sulphide
Electrical conduction
Thin films
Upload Date: 13-Nov-2013
University: Cochin University of Science and Technology
Completed Date: 20/06/1989
Abstract: This thesis entitled Electrical Conduction and Dielectric Behaviour of Thin Films of Vacuum Evaporated Amorphous Silicon Hydrogenated Amorphous Silicon and Chemically Deposited Cadmium Sulphide. In this thesis preparation of a Si:H thin films by vacuum evaporation using tungsten baskets is presented and their electrical and dielectric properties are reported. The thesis is divided into seven chapters. These includes the introduction to the subject, the general newlinemethods of thin film preparation along with the merits and demerits, a detailed investigation on the d.c. and a.c. electrical properties of a-Si and a-Si:H, details of dielectric property of a-Si:H films, and preparation and characterization of another semiconductor--cadmium sulphide. The newlineinvestigations presented in this thesis are mainly centred around the electrical properties of amorphous silicon and cadmium sulphide thin films. In the detailed analysis of the results of the investigations on d.c. and a.c. electrical conduction on a-Si and a-Si:H, it has been proved that a-Si:H films prepared by the present method are very similar to the glow discharge produced newlinefilms as far as the electrical properties are concerned. The investigations on the adsorbate induced d.c. conductivity changes in the a-Si and a-Si:H thin films have established the effect of donor type and acceptor type gases. The investigations have shown that by simply exposing a silicon film to hydrogen does not change its conductivity much. A careful examination of the various reviews on the properties of a-Si:H would reveal that it exhibits a variety of electrical properties making it one of the most important materials for device applications.
Pagination: 241p.
URI: http://hdl.handle.net/10603/12988
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
01_title page.pdfAttached File58.53 kBAdobe PDFView/Open
02_declaration and certificate.pdf59.73 kBAdobe PDFView/Open
03_acknowledgement.pdf65.82 kBAdobe PDFView/Open
04_preface.pdf67.85 kBAdobe PDFView/Open
05_abstract.pdf7.73 kBAdobe PDFView/Open
06_list of publications.pdf63.85 kBAdobe PDFView/Open
07_contents.pdf83.1 kBAdobe PDFView/Open
08_chapter 1.pdf411.7 kBAdobe PDFView/Open
09_chapter 2.pdf510.51 kBAdobe PDFView/Open
10_chapter 3.pdf1.17 MBAdobe PDFView/Open
11_chapter 4.pdf328.92 kBAdobe PDFView/Open
12_chapter 5.pdf386.38 kBAdobe PDFView/Open
13_chapter 6.pdf300.32 kBAdobe PDFView/Open
14_chapter 7.pdf109.54 kBAdobe PDFView/Open


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