Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/124554
Title: Wetting behaviour of silicon and dielectric materials attributed to texturing and self assembled monolayer
Researcher: Kumar, Vijay
Guide(s): Sharma, Niti nipun
Keywords: Behaviour,Silicon and Dielectric,Self Assembled Monolayer
University: Birla Institute of Technology and Science
Completed Date: 1/8/2015
Abstract: Since last decade, people have been attracted by the self-cleaning properties of the lotus newlineleaf, and dream to develop superhydrophobic surfaces. Many methods have been newlinedeveloped to produce a surface with water contact angle higher than 150o. In general, the newlinehydrophobic surfaces are prepared by combining high surface roughness and modify the newlinesurface with hydrophobic coating. The challenge here is to develop a robust hydrophobic newlinesurface with a simple process, so that it can be manufactured at industrial scale. The aim of newlinethis PhD research is to develop a simple method to prepare hydrophobic surfaces with newlinecommon method to all semiconductor materials. We have studied the semiconductor newlinematerials like silicon, low-k and high-k dielectric and polymers materials for betterment of newlinewetting properties of these materials. newlineIn Chapter 3, we have studied the wetting behaviour of silicon surface. In this chapter, we newlineused the chemical etchant and plasma etching system to make the silicon surface rough. newlineAfter texturing, the surface were modified using the Octadecyltrichlorosilane (OTS) Self newlineassembled monolayers (SAM). In addition, we also investigated the modification of back newlineside silicon wafer surfaces, piranha treated silicon surfaces and piranha with HF treated newlinesilicon surfaces for wetting behaviour of Silicon. newlineIn Chapter 4, we investigated the wetting behaviour of many a dielectric materials using newlinethe simple method developed for silicon surface given in Chapter 3. The low-k (SiO2) and newlinehigh-k dielectric (HfO2, Al2O3, TiO2 and Ta2O5) materials were used for the investigations. newlineAs for silicon surfaces, texturing with plasma followed with OTS SAM modification was newlineused for different dielectric materials for the study. The fluorine (SF6) plasma was used to newlinetexture the dielectric surfaces. newlineIn Chapter 5, we have studied the wetting behaviour of SU8 surface. The SU8 is most newlinewidely used materials for the microfluidics applications. The SU8 surfaces were textured newlineusing the fluorine and oxygen plasma chemistry. After texturing the OTS SAM
Pagination: xi
URI: http://hdl.handle.net/10603/124554
Appears in Departments:Mechanical Engineering

Files in This Item:
File Description SizeFormat 
2010phxf418p thesis.pdfAttached File32.66 MBAdobe PDFView/Open


Items in Shodhganga are protected by copyright, with all rights reserved, unless otherwise indicated.