Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/11080
Full metadata record
DC FieldValueLanguage
dc.coverage.spatialElectronics and Communicationen_US
dc.date.accessioned2013-09-11T09:37:27Z-
dc.date.available2013-09-11T09:37:27Z-
dc.date.issued2013-09-11-
dc.identifier.urihttp://hdl.handle.net/10603/11080-
dc.description.abstractRecently, The Growing Demand Of Low-Power And Low-Cost Wireless Transceivers, Various Integrated Circuit (Ic) Technologies Are Competing To Integrate More Radio Frequency (Rf) Functions Onto A Single Chip As Well As To Construct Discrete Rf Building Blocks. With The Development Of Modern Silicon Technology, More And More High-Frequency Circuits Can Be Implemented In Standard Complementary Metal-Oxide- Semiconductor (Cmos) Processes. Since Long Time, The Rf Switch Has Been Dominated By Discrete Components Using Pin Diodes And Mesfets. Modern Solid-State Rf Technologies Are Utilized For Their Fast Switching Speeds, Commercial Availability, Low Cost, And Ruggedness. The Feasibility Of Rf Ics In Standard Cmos Process Is Established And Trend In Putting All Components In A System-On-Chip Includes Integration Of The Transceiver (T/R) Antenna Switch. newline newlineIn This Thesis, We Have Designed A Double-Pole Four-Throw (Dp4t) Rf Switch To Enhance Its Performance For The Next Generation Wireless Communication Systems. Earlier, Designs Of The Dp4t Switch Uses Single-Gate N-Type Mosfet, Which Requires High Control Voltage (3.0 V To 5.0 V) To Operate And A Large Internal Resistances, Contact Resistances And Capacitances Are Produced In Design. This High Value Of Control Voltage Is Not Suitable For Modern Low Power Portable Devices, Which Require Smaller Power Consumption. Therefore, We Have Proposed A Novel Dp4t Switch By Using Double-Gate (Dg) Cmos Technology For The Purpose Of Various Rf Application.en_US
dc.format.extent129p.en_US
dc.languageEnglishen_US
dc.relation252en_US
dc.rightsuniversityen_US
dc.titleAnalysis and design of double-pole four-throw RF switch by using novel MOSFET Technologiesen_US
dc.creator.researcherSrivastava, Viranjay Mohanen_US
dc.subject.keywordDouble-Gate MOSFETen_US
dc.subject.keywordRadio Frequencyen_US
dc.subject.keywordRF Switchen_US
dc.description.noteReferences p. 112-129en_US
dc.contributor.guideYadav, Kalyan Sen_US
dc.contributor.guideSingh, Ghanshyam-
dc.publisher.placeSolanen_US
dc.publisher.universityJaypee University of Information Technology, Solanen_US
dc.publisher.institutionDepartment of Electronics and Communication Engineeringen_US
dc.date.registered08/01/2009en_US
dc.date.completed20/10/2011en_US
dc.date.awarded20/10/2011en_US
dc.format.dimensions--en_US
dc.format.accompanyingmaterialNoneen_US
dc.source.universityUniversityen_US
dc.type.degreePh.D.en_US
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File230.12 kBAdobe PDFView/Open
02_certificate.pdf289.37 kBAdobe PDFView/Open
03_acknowledgement.pdf260.36 kBAdobe PDFView/Open
04_contents.pdf638.35 kBAdobe PDFView/Open
05_list of tables figures.pdf1.23 MBAdobe PDFView/Open
06_chapter 1.pdf8.07 MBAdobe PDFView/Open
07_chapter 2.pdf6.31 MBAdobe PDFView/Open
08_chapter 3.pdf14.07 MBAdobe PDFView/Open
09_chapter 4.pdf9.98 MBAdobe PDFView/Open
10_chapter 5.pdf13.14 MBAdobe PDFView/Open
11_chapter 6.pdf2.34 MBAdobe PDFView/Open
12_references.pdf12.71 MBAdobe PDFView/Open


Items in Shodhganga are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: