Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/54413
Title: Growth and Characterization of Some Doped TGS Crystals
Researcher: DEEPTHI P R
Guide(s): Shanthi J
Keywords: Doped TGS Crystals
Characterization
Upload Date: 20-Oct-2015
University: Avinashilingam Deemed University For Women
Completed Date: 25/09/2015
Abstract: Crystal growth is a vital and fundamental part of material science and engineering because crystals of suitable size and perfection are required for fundamental data acquisition and for practical devices such as detectors integrated circuits and for other millions and millions of applications Behind every new solid state device there stands a single crystal The ever increasing application of semiconductor based electronics creates an enormous demand for high quality semiconducting ferroelectric piezoelectric oxide single crystals newlineThere are two principal reasons for the deliberate growth of single crystals because many physical properties of solids are obscured or complicated by the effects of grain boundaries and the full range of tensor relationships between applied physical cause and observed effect can be obtained only if the full internal symmetry of the crystal structure is maintained through the specimen Ferroelectric materials pervaded a broad range of industrial and domestic applications as a result of their large electro optic and nonlinear optical coefficients and are of fundamental interest due to their polarization hysteresis photo refraction piezoelectricity and pyro electric properties This range of electrical and optical phenomena has been exploited in a number of technological applications which include electro optic scanners and lenses integrated optics piezoelectric transducers pyro electric detectors ferroelectric memories surface acoustic wave devices and quasi phase matched crystals for nonlinear frequency conversion
Pagination: 
URI: http://hdl.handle.net/10603/54413
Appears in Departments:Department of Physics

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